Product Summary

The K6T4008C1B-GB55 is fabricated by SAMSUNGs advanced CMOS process technology. This product support various operating temperature ranges and various package types for user flexibility of system design. The device also support low data retention voltage for battery back-up operation with low data retention current.

Parametrics

Absolute maximum ratings:(1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to 7.0V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.5 to 7.0V; (3)Power Dissipation, PD: 1.0W; (4)Storage temperature, TSTG: -65 to 150℃ ; (5)Operating Temperature, TA: 0 to 70℃; (6)Soldering temperature and time, TSOLDER: 260℃, 10sec(Lead Only).

Features

Features:(1)Process Technology: TFT; (2)Organization: 512Kx8; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.

Diagrams

K6T4008C1B
K6T4008C1B

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Data Sheet

Negotiable 
K6T4008U1C-B
K6T4008U1C-B

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Data Sheet

Negotiable 
K6T4008U1C-F
K6T4008U1C-F

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Data Sheet

Negotiable 
K6T4008V1C-B
K6T4008V1C-B

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Data Sheet

Negotiable 
K6T4008V1C-F
K6T4008V1C-F

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Data Sheet

Negotiable 
K6T4016U3C
K6T4016U3C

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Data Sheet

Negotiable